FDT86244 mosfet equivalent, n-channel mosfet.
* Shielded Gate MOSFET Technology
* Max RDS(on) = 128 mW at VGS = 10 V, ID = 2.8 A
* Max RDS(on) = 178 mW at VGS = 6 V, ID = 2.4 A
* High Performance Tren.
* Load Switch
* Primary Switch
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
Rati.
This N−Channel MOSFET is produced using Fairchild onsemi
advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for RDS(on), switching performance and ruggedness.
Features
* Shielded Gate MOSFET .
Image gallery
TAGS